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TYPICAL PERFORMANCE CURVES
APT100GN120B2 1200V APT100GN120B2 APT100GN120B2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
G C E
T-Max
(R)
(R)
* 1200V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling * Integrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C
8 8
All Ratings: TC = 25C unless otherwise specified.
APT100GN120B2 UNIT Volts
1200 30 245 100 300 300A @ 1200V 960 -55 to 150 300
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 4mA, Tj = 25C) MIN TYP MAX Units
1200 5.0 1.4 5.8 1.7 2.0 100
2
6.5 2.1
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125C)
I CES I GES RG(int)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
A nA
12-2007 050-7626 Rev A
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor
TBD 600 7.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT100GN120B2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 100A TJ = 150C, R G = 4.3 7, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 100A
4 5
MIN
TYP
MAX
UNIT
6500 365 280 9.5 540 50 295 300 50 50 615 105 11 15 9.5 50 50 725 210 12 22 14 mJ
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
mJ
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 100A RG = 1.0 7
55
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.13 N/A 6.1
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
12-2007 Rev A
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous Current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-7626
TYPICAL PERFORMANCE CURVES
300 300
V
GE
APT100GN120B2
15V 13V IC, COLLECTOR CURRENT (A) 250 12V
= 15V
IC, COLLECTOR CURRENT (A)
250
TJ = -55C TJ = 25C
200 TJ = 125C 150 TJ = 175C 100
200 11V 150 10V 9V 8V 7V
100
50 0
50 0
0 1.0 2.0 3.0 4.0 5.0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25C) 300 250 TJ = 125C 200 TJ = 25C 150 TJ = -55C 100 50 0 VGE, GATE-TO-EMITTER VOLTAGE (V) TJ = 150C
FIGURE 2, Output Characteristics (TJ = 125C) 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.5 3 2.5 2 1.5 IC = 50A 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE I = 100A C T = 25C
J
IC, COLLECTOR CURRENT (A)
VCE = 240V VCE = 600V VCE = 960V
0
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 IC = 50A IC = 100A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 200A
IC = 200A
IC = 100A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
8
0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 350
0 -50 -25
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
300 250 200 150 100 50 0 -50
Lead Temperature Limited
050-7626
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev A
12-2007
APT100GN120B2
60 50 40 30 20 10 T = 25C, or 125C J 0
RG = 1.0 L = 100H VCE = 800V
1000 td (OFF), TURN-OFF DELAY TIME (ns) VGE = 15V
td(ON), TURN-ON DELAY TIME (ns)
800
600
VGE =15V,TJ=125C VGE =15V,TJ=25C
400
200
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 250
RG = 1.0, L = 100H, VCE = 800V
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250
0
VCE = 800V RG = 1.0 L = 100H
200 tr, RISE TIME (ns) tf, FALL TIME (ns)
200
TJ = 125C, VGE = 15V
150
150
100
100
TJ = 25C, VGE = 15V
50
TJ = 25 or 125C,VGE = 15V
50
RG = 1.0, L = 100H, VCE = 800V
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 80,000 EON2, TURN ON ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 1.0
G
0
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 30,000 EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 1.0
G
0
25,000
60,000
TJ = 125C
TJ = 125C
20,000
40,000
15,000
10,000
20,000
TJ = 25C
5000 0
TJ = 25C
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 100,000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE T = 125C
J
0
10 40 70 100 130 160 190 220 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 80,000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 1.0
G
Eon2,200A
Eon2,200A
80,000
60,000
60,000
40,000
40,000
Eoff,200A Eon2,100A
12-2007
20,000
Eoff,200A
Eon2,100A Eon2,50A Eoff,50A
20,000
Eoff,100A Eon2,50A Eoff,50A
Rev A
Eoff,100A
050-7626
5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
10,000 5,000 C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 350 300 250 200 150 100 50 0
APT100GN120B2
P
1,000 500 Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 D = 0.9 0.7 0.5
Note:
ZJC, THERMAL IMPEDANCE (C/W)
0.3 0.1 0.05 SINGLE PULSE
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-4
1.0
50 FMAX, OPERATING FREQUENCY (kHz)
40
30
TJ (C)
0.0273 Dissipated Power (Watts) 0.00088 0.0233 0.649 0.0558
TC (C)
0.0467
ZEXT
20
T = 125C J T = 75C C D = 50 % = 800V V CE R = 1.0
G
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
10
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0
20 40
050-7626
Rev A
12-2007
APT100GN120B2
Gate Voltage
APT100DQ120
10% TJ = 125C td(on) tr
V CC
IC
V CE
Collector Current 90% 5% 10% Collector Voltage
5%
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage td(off) 90% tf 10% Collector Voltage
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX(R) (B2) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector Emitter
Rev A
12-2007
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-7626
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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